Samsung's next-gen chip technology delayed until 2022 - CNET
Samsung Foundry tapes out 3nm GAA chip | SemiWiki
Samsung Foundry Promises Gate All-Around in '22
Stephen Shankland on X: "Samsung's 3nm GAA transistors are 45% smaller than 7nm FinFET transistors. https://t.co/9Okrvg8k2P" / X
From FinFET to GAA: Samsung's fab journey to 3nm and 2nm - EDN Asia
Samsung sets sights on GAA tech to overtake TSMC in foundry - KED Global
World record: 5 nm GAAFET IC from IBM, Samsung & GlobalFoundries | Elektor Magazine
Samsung Electronics' 3-nano GAA 'Tape Out'...Smooth Preparation for Mass Production of 3-nano Foundry - ETNews
Samsung Begins Chip Production Using 3nm Process Technology With GAA Architecture - Samsung Newsroom Global Media Library
MBCFET Process Technology to Enable 3nm Chips in 2021 - CNX Software
Samsung's June 2023 Reveal: Enhanced 3nm & 4nm Chip Fabrication Process
GAA MBCFET™ PPA optimization through DTCO | Samsung Semiconductor Global
GAA structure' transistors | Samsung Semiconductor Global
Samsung Starts 3nm Production: The Gate-All-Around (GAAFET) Era Begins
GAA MBCFET™ PPA optimization through DTCO | Samsung Semiconductor Global
Samsung Begins Chip Production Using 3nm Process Technology With GAA Architecture – Samsung Global Newsroom
Samsung to Deliver 3 nm Manufacturing Process in 2022 with Next-Generation Transistors | TechPowerUp
About 2020 for Samsung 3 Nanometer MBCFET Chip on Roadmap | NextBigFuture.com
GAA structure' transistors | Samsung Semiconductor Global
IBM Announces 2nm GAA-FET Technology – the Sum of “Aha!” Moments - Semiconductor Digest
Samsung Starts 3nm Production: The Gate-All-Around (GAAFET) Era Begins
How Samsung Foundry's GAA is Leading a Quantum Jump in the World of Semiconductors - YouTube
GAA MBCFET™ PPA optimization through DTCO | Samsung Semiconductor Global
Samsung Plans 3nm Gate-All-Around FETs in 2021 - EE Times
3nm GAA MBCFET™: Unrivaled SRAM Design Flexibility | Samsung Semiconductor Global
